SiC and GaN Power Semiconductors Market

SiC and GaN Power Semiconductors Market Size Report – In a Glance

As per the survey report on global SiC and GaN power semiconductors market, the market is expected to foresee a CAGR value of 23.1% during 2025-2035, and further generate a market size of USD 11.8 billion by the end of 2035. In 2025, the market size was value at USD 1.6 billion revenue.

• The global SiC and GaN power semiconductors market’s growth is driven by transformation in power electronic components.
• In Japan, the SiC and GaN power semiconductors market’s growth is influenced by growing demand for high-efficiency and high-performance power components.
• KDMI analyst’s growth analysis foresees the growth of renewable energy sector and electric vehicles industry as the growth drivers for SiC and GaN power semiconductors market.
• North America, having the highest market share in the SiC and GaN power semiconductors market.

SiC and GaN Power Semiconductor Market Analysis

Silicon Carbide (SiC) and Gallium Nitride (GaN) are wide-bandgap power semiconductors that helps in enhancing efficiency and performance of electronic devices, DC/AC converters, and DC/AC inverters. These semiconductor devices are highly applied in electronic industry due to their high voltage capacity and high critical field resultant of 10 times higher breakdown voltage, which promises high frequency and high power in devices. The market growth is driven by the transformation in power electronics, overcoming the limitations of traditional silicon-based semiconductors, and enhanced efficiency of electricity. Infineon Technologies AG, Cree, and ON Semiconductor are some of the significant participants in the global SiC and GaN power semiconductor market.

Analyst’s Observation on Japan SiC and GaN power semiconductor Market Survey

In Japan, the SiC and GaN power semiconductor market growth is driven by increasing demand for high-efficiency and high-performance power components. The growth of automotive, renewable energy, and telecommunication industry is contributing in the demand for sustainable and eco-friendly semiconductors to enhance productivity. The Japanese government has announced the funding of USD 391.36 million to support electric vehicle (EV) battery development plan of Nissan Motor Co Ltd, which led the growth in the adoption of SiC and GaN power semiconductor devices. Roma Semiconductor Group, Fuji Electric, and Littlefuse are some of the significant participants in the Japan SiC and GaN power semiconductor market.

SiC and GaN Power Semiconductor Market Growth Drivers and Restraints

Growth Drivers

• Increasing adoption in Electric Vehicles (EVs) – SiC and GaN power semiconductors play major role in electric vehicle market by enhancing electricity efficiency and vehicle performance. Both silicon carbide and gallium nitride are essential components of power electronic components due to their properties of faster charging and longer range. Silicon carbide is mainly used in electric vehicles as they are highly capable of handling high voltage and temperature in vehicles, and gallium nitride components possess ability to enhance performance of DC/AC converters and other power-based devices. The demand for highly-efficient batteries in vehicles has grown by 80% in the US.
• Rise in renewable energy application – The rising renewable energy sector is also leading to the growth of SiC and GaN power semiconductors due to increasing demand for sustainable solutions in enhancing battery life. The silicon carbide and gallium nitride components are highly used for solar inverters and wind turbines due to the properties of handling high-frequency and resistance from high-temperatures. These application in the industry helps in the reduction of energy loss, improved efficiency, and protecting environment by implementing sustainable solutions. According to the International Energy Agency (IEA), the global renewable energy generation is estimated to reach 17,000 terawatt per hour by the end of this decade, increased by nearly 90% since 2023.  

Restraints

• High Initial Costs – The market growth of SiC and GaN power semiconductor faces challenges due to high deployment and maintenance costs. The manufacturing of such components is a complex process which demand for skilled labors, but due to market fluctuation, sometimes it is difficult to get skilled labors. Also, the scarcity of raw materials for the production of silicon carbide and gallium nitride power semiconductor components poses as a restraint for the market growth. The market suffers due to high demand for accurate technical integration and scalability in the production of electronic devices and appliances.

SiC and GaN Power Semiconductor Market Segmentation

Our experts at KD Market Insights have segmented the global SiC and GaN power semiconductor market research report as:

SiC and GaN Power Semiconductor Market Regional Synopsis

North America leads the global SiC and GaN power semiconductor market and the growth is propelled by the growing automotive industry and adoption of sustainable electric solutions. The government initiatives and investments in semiconductor manufacturing is leading the application of silicon carbide and gallium nitride components to enhance productivity. The US is the leading country with the growing consumer demand for efficient energy storage solutions for their growing adoption of digitalization. The country’s 26% of the workforce is employed in digital job, which is increased by 18% from 2010, showing the greater demand for highly efficient semiconductor devices.

Asia-Pacific SiC and GaN power semiconductor market growth is driven by rapid urbanization and adoption of electric vehicles in the region. The growing adoption of electric vehicles in the region is due to the aim of reducing greenhouse gas emission and environment protection from harmful energy sources. Japan, China, and India are the countries with larger consumer base for electric vehicles with the support of government and incentives to the consumers. The developing and emerging countries in the region saw an increase of 40% in electric car sales, leading to the growing application of SiC and GaN power semiconductors.

In Europe, the SiC and GaN power semiconductor market growth is influenced by the growing demand for safety of data and storage options. European consumers are highly prioritizing the safety and security of their data, leading to the growth of data center market. This growing demand for data storage and safety leads to the growing demand for silicon carbide components in semiconductor devices to enhance efficiency and gallium nitride components for high-frequency.

Latin America’s SiC and GaN power semiconductor market growth is driven by increasing awareness of digital security and investment by companies in infrastructure development.

Middle East and Africa SiC and GaN power semiconductor market growth is supported by rapid urbanization, smart home, high-end cultures, and much more. The demand for highly efficient and sustainable solutions is rising the market growth.

As per our analysts at KD Market Insights, the following five participants lead the North America SiC and GaN power semiconductor market growth:

• ROHM Co Ltd
• Toshiba Corporation
• Renesas Electronics Corporation
• VisIC Technologies Ltd
• Cree, Inc

SiC and GaN Power Semiconductor Market Competitive Landscape

Some of the significant participants who top the global SiC and GaN power semiconductor market share:

• Alpha and Omega Semiconductor
• Fuji Electric Co., Ltd
• Infineon Technologies AG
• Littelfuse, Inc.
• Mitsubishi Electric Corporation
• Renesas Electronics Corporation
• ROHM SEMICONDUCTOR
• SANKEN ELECTRIC CO., LTD.
• STMicroelectronics
• IQE PLC
• Transphorm Inc.
• Saint-Gobain
• GeneSiC Semiconductor Inc.